Thermal stability of a HfO2∕SiO2 interface
| Autor: | Takashi Nakagawa, Nobuyuki Ikarashi, Koji Watanabe, Koji Masuzaki |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Surface diffusion
Materials science Physics and Astronomy (miscellaneous) Scanning electron microscope Transmission electron microscopy Chemical physics Annealing (metallurgy) Scanning transmission electron microscopy Analytical chemistry Energy filtered transmission electron microscopy Thermal stability Dopant Activation |
| Zdroj: | Applied Physics Letters. 88:101912 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2182023 |
| Popis: | Using high-angle annular-dark-field scanning transmission electron microscopy, we showed how annealing at 1000°C changes the chemical composition distribution at a HfO2∕SiO2 interface. The observed change in the distribution was analyzed in terms of Hf diffusion in SiO2; the diffusion coefficient was estimated to be 2.5×10−18cm2∕s. This diffusion coefficient indicates that the high-temperature annealing, such as that in the conventional dopant activation process used to fabricate semiconductor devices, barely changes the chemical composition distribution at the HfO2∕SiO2 interface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|