Charge Trapping Analysis of High Speed Diamond FETs
| Autor: | A. Glen Birdwell, Tony Ivanov, James Weil, Pankaj B. Shah |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Gate dielectric Doping Diamond 02 engineering and technology Electron engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Acceptor Molecular physics Microsecond Mechanics of Materials 0103 physical sciences engineering General Materials Science Charge carrier Field-effect transistor 0210 nano-technology |
| Zdroj: | MRS Advances. 2:2235-2240 |
| ISSN: | 2059-8521 |
| Popis: | Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond – Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface. |
| Databáze: | OpenAIRE |
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