Bulk photoconductivity of CVD diamond films for UV and XUV detection
| Autor: | Jocelyn Achard, A. Tardieu, H. Schneider, Marie-Claude Castex, Christophe Beuille, E. Lefeuvre |
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| Rok vydání: | 2003 |
| Předmět: |
Electron mobility
Materials science business.industry Mechanical Engineering Photoconductivity Wide-bandgap semiconductor Photodetector Diamond Biasing General Chemistry Photodetection engineering.material Laser Electronic Optical and Magnetic Materials law.invention Optics law Materials Chemistry engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Diamond and Related Materials. 12:642-646 |
| ISSN: | 0925-9635 |
| Popis: | Owing to its semiconducting properties (wide band gap, high electron and hole mobility), diamond is an interesting material for UV and XUV photodetection. In the present study, we have characterized UV and evaluated XUV diamond photodetector efficiency using volume photoconductivity instead of usual surface interdigited devices. The detectors have been tested under over-gap (13 and 193 nm) as well as sub-gap nanosecond laser irradiation (266 nm). For each wavelength, electrical characteristics of the devices have been measured as a function of bias voltage and laser fluences. The particular sandwich configuration of the detectors has shown a charge effect under over-gap irradiation. This appears by the amplitude reduction of successive pulses, and also from the different response for AC and DC bias. The suitability of these devices is discussed, the final aim being to validate bulk structures for wide band imaging devices. |
| Databáze: | OpenAIRE |
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