Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Autor:	Mikhail V. Maximov, F. I. Zubov, Alexander Mintairov, Charis Mesaritakis, A. M. Nadtochy, A. V. Savel’ev, N. V. Kryzhanovskaya, E. M. Arakcheeva, Dimitrios Syvridis, Eduard Moiseev, A. E. Zhukov, D.A. Livshits, Andrey A. Lipovskii, Alexandros Kapsalis, M. M. Kulagina
Rok vydání:	2013
Předmět:	Materials science Photoluminescence business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optical microscope Quantum dot law Q factor Optoelectronics business Lasing threshold
Zdroj:	Semiconductors. 47:1387-1390
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782613100187
Popis:	Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b702a4ff3a0d2d22a236c278bf645c00 https://doi.org/10.1134/s1063782613100187 Zobrazit plný text záznamu Plný text ve formátu PDF