Structure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn

Autor:	V. G. Shengurov, M. V. Ved, S. A. Denisov, M. Yu Kuz’min, A. V. Zaitsev, V. Yu. Chalkov, A. V. Kudrin, D. O. Filatov
Rok vydání:	2020
Předmět:	History Morphology (linguistics) Materials science Chemical engineering Evaporation Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1482:012016
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1482/1/012016
Popis:	This paper presents the results of the investigation of Ge1-xSnx epitaxial layers grown by the hot wire chemical vapor deposition (HW CVD) method with simultaneous evaporation of Sn from a standard effusion cell. The Ge1-xSnx with a Sn molar fraction of 7.2% and a full width at half maximum (FWHM) of the rocking curve of 7.6` demonstrated intense photoluminescence at room temperature. The peaks in the energy bands 0.70 – 0.73 eV and 0.63 – 0.65 eV have been observed in the photoluminescence spectra. These peaks were related to the direct and indirect interband radiative optical transitions in GeSn, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b6f3a446f4f2e461cd83d43ee6dac968 https://doi.org/10.1088/1742-6596/1482/1/012016 Zobrazit plný text záznamu