The multistable charge controlled memory effect in SOI-transistors at low temperatures

Autor:	G. Declerck, C. Claeys, M. Tack, M.H. Gao
Rok vydání:	2003
Předmět:	Semiconductor storage Materials science Memory cell law business.industry Transistor Optoelectronics Silicon on insulator Charge (physics) business NMOS logic Visible spectrum law.invention
Zdroj:	Proceedings of the Workshop on Low Temperature Semiconductor Electronics.
DOI:	10.1109/ltse.1989.50198
Popis:	The operation of nMOS-transistors, made in SOI material, is investigated at low temperatures. A new phenomenon, the MCCM (multistable charge controlled memory) effect, is observed. Measurements demonstrating this MCCM effect are presented on nMOS transistors made in ZMR-SOI material. A physical model and an analytical model are given. Finally, some very promising applications of the MCCM-effect are highlighted, such as its use as a visible light sensor and as a very dense memory cell, with refresh times on the order of several hours. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b6f2ab6fbd5d706214e5fab6e8d65114 https://doi.org/10.1109/ltse.1989.50198 Zobrazit plný text záznamu