| Autor: |
Sakai Masashi, Nobuyuki Tomita, Masayoshi Tarutani, Yoichiro Mitani, Naoyuki Kawabata, Takeharu Kuroiwa, Hiroaki Sumitani, Takanori Tanaka, Masayuki Imaizumi, Yoshihiko Toyoda, Satoshi Yamakawa |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :133-136 |
| ISSN: |
1662-9752 |
| Popis: |
The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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