Composition of plasma-chemical silicon dioxide films as studied by IR spectroscopy

Autor:	A. Sh. Komarevskaya, V. G. Gogolev, V. L. Yur’ev, I. M. Pronina, V. M. Izgorodin
Rok vydání:	2007
Předmět:	Glow discharge Argon Chemistry Silicon dioxide Analytical chemistry Infrared spectroscopy chemistry.chemical_element Substrate (electronics) equipment and supplies Oxygen chemistry.chemical_compound Deposition (phase transition) Electric discharge Physical and Theoretical Chemistry
Zdroj:	High Energy Chemistry. 41:279-283
ISSN:	1608-3148 0018-1439
DOI:	10.1134/s001814390704011x
Popis:	The results of a comparative analysis of the compositions of silicon dioxide films prepared by the decomposition of tetraethoxysilane vapor in a glow discharge and the deposition of the products onto a substrate are presented. The compositions of films prepared in gas mixtures containing argon, oxygen, tetraethoxysilane vapor, and NaCl were compared using IR spectroscopy. The electric discharge was excited at a frequency of 19 kHz and in a radiofrequency range at 81.36 MHz. It was found that the additives of oxygen and sodium-containing vapors exerted a noticeable effect on the composition of the films. The compositions of the films prepared at the low-frequency and high-frequency discharge excitation were also different.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b6e4239b9d32986b3f200df9eba761d6 https://doi.org/10.1134/s001814390704011x Zobrazit plný text záznamu Plný text ve formátu PDF