Pressure-dependent large area synthesis and electronic structure of MoS 2
| Autor: | Gonzalo Otero-Irurueta, María J. Hortigüela, Andrei L. Kholkin, Sara Fateixa, Dhananjay K. Sharma, E. Venkata Ramana, Helena I. S. Nogueira |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Photoemission spectroscopy Graphene Mechanical Engineering Analytical chemistry Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention chemistry.chemical_compound chemistry Mechanics of Materials law General Materials Science Electrical measurements Work function Direct and indirect band gaps 0210 nano-technology Spectroscopy Molybdenum disulfide |
| Zdroj: | Materials Research Bulletin. 97:265-271 |
| ISSN: | 0025-5408 |
| Popis: | Molybdenum disulfide (MoS 2 ) is a transition metal dichalcogenide, which along with graphene, has a great potential to become a material of choice for the next generation of nanoelectronics. We report the synthesis of a large-area MoS 2 obtained by sulfurization of MoO 3 using chemical vapor deposition (CVD) at different Ar base pressures. The optimal pressure for the growth was found to be ∼50 mbar (millibar). The evolution of MoS 2 phase as a function of Ar gas pressure was monitored by confocal Raman spectroscopy. As synthesized MoS 2 shows direct bandgap of 1.6 eV evaluated by UV–vis spectroscopy. We report for the first time the valence band spectra and the work function of MoS 2 on SiO 2 /Si calculated by ultraviolet photoemission spectroscopy, which was found to be 4.67 eV. In-situ electrical measurements demonstrated expected semiconducting behavior of the grown triangular crystals. These studies show MoS 2 crystallites growth by controlling the parameters in CVD process. |
| Databáze: | OpenAIRE |
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