Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering
| Autor: | N. Mumumbila, P. Y. Tessier, H. Belkhir, N.E. Derradji, M.L. Mahdjoubi, B. Angleraud |
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| Rok vydání: | 2005 |
| Předmět: |
Chemistry
Metals and Alloys Analytical chemistry Surfaces and Interfaces Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Carbon film X-ray photoelectron spectroscopy Amorphous carbon Sputtering Electrical resistivity and conductivity Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 482:258-263 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.11.137 |
| Popis: | Amorphous carbon nitride (a-CN x ) thin films have been synthesized by rf reactive magnetron sputtering of a graphite target in an Ar/N 2 gas mixture. The total discharge pressure was 1.3 Pa and an N 2 fraction in plasma was between 0 and 0.5. The electrical resistivity of films was studied as a function of temperature between 80 and 360 K. At very low nitrogen contents in films, the resistivity decreases with increasing nitrogen content, whereas there is a strong increase in ρ at nitrogen content higher than 13 at.%. Chemical composition and C–N bonds was investigated by X-ray Photoelectron Spectroscopy (XPS). The results, related to the core level C1s and N1s, show the structural change. The temperature dependence evolutions was thermally activated and suggest the presence of two types of conduction associated with two different activation energies. The conductivity variation was interpreted within the limits of the band structure model of the π electrons in a disordered carbon with the presence of localized states. |
| Databáze: | OpenAIRE |
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