Preparation and properties of two indium antimony selenides
| Autor: | Robert P. Gruska, Carlos A. Castro, Aaron Wold, Michel Spiesser, S.N. Subbarao |
|---|---|
| Rok vydání: | 1978 |
| Předmět: |
Materials science
Band gap business.industry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Isothermal process Electronic Optical and Magnetic Materials Inorganic Chemistry Crystallography Semiconductor Antimony chemistry Electrical resistivity and conductivity Materials Chemistry Ceramics and Composites Orthorhombic crystal system Physical and Theoretical Chemistry Isostructural business Indium |
| Zdroj: | Journal of Solid State Chemistry. 26:111-114 |
| ISSN: | 0022-4596 |
| Popis: | Crystals of antimony-doped In2Se3 were grown by the Bridgeman method. This compound, whose composition is In1.8Sb0.2Se3, appears to be isostructural with In1.9As0.1Se3. The refined unit cell parameters are a = 3.97(1), c = 18.87(1) A. Orthorhombic crystals of InSbSe3 were grown from an isothermal melt. The refined unit cell parameters are a = 9.43(1), b = 14.02(5), and c = 3.96(1) A. These parameters agree with those determined for α-InSbSe3 by other studies. The observed densities measured by a hydrostatic technique are 5.98(3) g/cm3 for In1.8Sb0.2Se3 and 6.07(2) g/cm3 for InSbSe3. The room temperature dc resistivity for In1.8Sb0.2Se3 has been found to be 4.4 × 104 Ω-cm, whereas that of InSbSe3 has been found to be 15.2(1) Ω-cm. A resistivity versus temperature study has beenn carried out for InSbSe3 between 230 and 400°K. Optical studies indicate that In1.8Sb0.2Se3 is an n-type semiconductor with a band gap of 1.1 eV and InSbSe3 is a p-type semiconductor with a band gap of 0.92 eV. |
| Databáze: | OpenAIRE |
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