Growth and characterization of electrodeposited films of cadmium telluride on silicon
| Autor: | M.G. Astles, D.J. Diskett, J.M. Fisher, Leonard Berlouis, S. M. MacDonald, L.J.M. Sawers, S. Affrossman |
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| Rok vydání: | 1994 |
| Předmět: |
Silicon
Chemistry business.industry chemistry.chemical_element Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Inorganic Chemistry Crystallography Differential scanning calorimetry Semiconductor X-ray photoelectron spectroscopy Ellipsometry Materials Chemistry Optoelectronics business Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 138:86-93 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(94)90785-4 |
| Popis: | This work describes the growth and characterization of electrodeposited films of the II–VI semiconductor CdTe directly on to p- and n-type silicon. In-situ ellipsometry has revealed the presence of a spontaneously deposited Te layer on illuminated p-type Si and on n-type Si. The growth of the spontaneous layer has been verified by the other techniques used to characterize the electrodeposited films, such as differential scanning calorimetry, X-ray photoelectron spectroscopy, energy dispersive analysis by X-rays, Rutherford backscattering and X-ray diffraction. The subsequent growth of the CdTe layer on top of this is close to stoichiometric composition but the film does not appear to form a coherent layer. |
| Databáze: | OpenAIRE |
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