A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications
| Autor: | T. Yamada, Yasuhiro Katsumata, Shigeru Kawanaka, Tomoaki Shino, Makoto Yoshimi, H. Nii, K. Inoh |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Bipolar junction transistor Transistor Electrical engineering Silicon on insulator Bipolar transistor biasing Capacitance Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering Thin film business Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 47:1536-1541 |
| ISSN: | 0018-9383 |
| Popis: | In this paper, a novel lateral bipolar transistor on thin film silicon-on-insulator (SOI) is presented. With a small emitter size of 0.12/spl times/3.0 /spl mu/m/sup 2/, low base resistance of 270 /spl Omega/ due to a novel Co silicided base electrode and low base-collector parasitic capacitances of 1.4 fF due to SOI material, it achieves the highest f/sub max/ of 67 GHz among SOI bipolar transistors. Also, the low emitter-base capacitance of 1.5 fF and the low collector-substrate capacitance of 2.5 fF are realized. The transistor has a simple structure, which is fabricated with simplified processes without any new sophisticated technologies, excluding trench isolation and epitaxial base used in current bipolar transistors. This can lower the fabrication cost of transistors. We have demonstrated the possibility of lateral bipolar transistor on thin film SOI as next-generation device for RF analog applications. |
| Databáze: | OpenAIRE |
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