Study of substrate bias effect in Symmetric Lateral Bipolar Nano Scale Transistor on SOI for mixed signal applications
| Autor: | Kundan Singh, L. Beloni Devi, A. Srivastava |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Heterostructure-emitter bipolar transistor business.industry 020208 electrical & electronic engineering Transistor Bipolar junction transistor Silicon on insulator Biasing Mixed-signal integrated circuit Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Cutoff frequency law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics business Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | NEMS |
| Popis: | Symmetric Lateral Bipolar Nano Scale Transistor has emerged as a promising device for future low power digital and mixed signal circuits with application in NEMS. This novel device has shown promising results in terms of Voltage-transfer-characteristics and butterfly curves for digital applications [2, 10]. It has shown better cut-off frequency and gain for low power mixed signals circuits. This paper explores further the effect of biasing the substrate beneath the symmetric lateral bipolar transistors on buried oxide (BOX). This device introduces, in addition to the three conventional terminals, a fourth terminal which provides a better means to control the performance for analog applications. We observed improvement in gain, cut-off frequency and leakage current by introducing an external bias to the fourth terminal of the nano lateral bipolar device for low power mixed signal circuits particularly for applications in NEMS. |
| Databáze: | OpenAIRE |
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