Flexible IGZO thin-film transistors and inverter circuits with diode-connected transistors fabricated on transparent polyimide substrates
| Autor: | Chang-Yu Lin, Chyi-Ming Leu, Yung-Hui Yeh, Kechao Tang |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Transistor Condensed Matter Physics Flexible electronics Electronic Optical and Magnetic Materials law.invention Hardware and Architecture law Thin-film transistor Etching (microfabrication) Optoelectronics Inverter Electrical and Electronic Engineering business Polyimide Diode Electronic circuit |
| Zdroj: | Microsystem Technologies. 28:275-278 |
| ISSN: | 1432-1858 0946-7076 |
| DOI: | 10.1007/s00542-019-04707-6 |
| Popis: | Amorphous In2O3–Ga2O3–ZnO (a-IGZO) thin-film-transistors (TFTs) have attracted increasing attention in recent years due to their potential on flexible electronics applications. We investigated low-temperature-processed a-IGZO TFTs and inverters on transparent polyimide. We had successfully implemented flexible top-gate staggered a-IGZO TFTs and inverter circuits on transparent polyimide-based nanocomposite substrates using fully lithographic, etching and PECVD processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility > 20 cm2/V s) as de-bonded from the carrier glass. Furthermore, the IGZO-based inverter also showed decent performances (voltage gain > 1.5) and is considered as a potential pathway toward flexible electronics. |
| Databáze: | OpenAIRE |
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