Bent silicon crystal in the Laue geometry to resolve x-ray fluorescence for x-ray absorption spectroscopy

Autor:	Arthur Jeremy Kropf, C. Karanfil, Carlo U. Segre, S. B. Aase, Jeff Terry, J. A. Fortner, Grant Bunker, L. D. Chapman, R. J. Finch
Rok vydání:	2003
Předmět:	Monocrystalline silicon X-ray spectroscopy X-ray absorption spectroscopy Materials science Silicon chemistry Absorption spectroscopy chemistry.chemical_element X-ray fluorescence Geometry Spectroscopy Laser-induced fluorescence Instrumentation
Zdroj:	Review of Scientific Instruments. 74:4696-4702
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1618014
Popis:	A highly strained, curved silicon crystal in the Laue geometry has been used as a large-area x-ray fluorescence analyzer for x-ray absorption spectroscopy. The analyzer is able to resolve the Lα fluorescence lines for neighboring actinide elements. A large gain in the signal to background ratio has been demonstrated for small quantities of Np in the presence of U, with the U fluorescence peak approaching 1000 times the magnitude of the off-peak background.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b6a916ff6775ff7ce8194999805bfc6d https://doi.org/10.1063/1.1618014 Zobrazit plný text záznamu