Autor:	P. Garnier, T. Liebler, D. Guyomard, J. Beaucour, C. Poivey
Rok vydání:	2005
Předmět:	Non-volatile memory Computer science Electronic engineering EPROM Cmos process Reliability engineering
Zdroj:	Workshop Record. 1994 IEEE Radiation Effects Data Workshop.
DOI:	10.1109/redw.1994.633031
Popis:	SEEQ 28C010 and Hybrid Memory MEM8129 1M EEPROMs were tested to heavy ions. Results showed a high SEP sensitivity especially during write cycles. These results lead to application limitations for use in space programs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b68c54bfdf8b34c358c4496d07605cf5 https://doi.org/10.1109/redw.1994.633031 Zobrazit plný text záznamu