Stress generation in thin Cu‐Ti films in vacuum and hydrogen
| Autor: | P. J. Ficalora, C. Apblett |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Silicon Hydrogen Annealing (metallurgy) General Physics and Astronomy chemistry.chemical_element Mineralogy Copper Thermal expansion Computer Science::Other Condensed Matter::Materials Science chemistry Sputtering Condensed Matter::Superconductivity Thin film Composite material Titanium |
| Zdroj: | Journal of Applied Physics. 69:4431-4432 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.348370 |
| Popis: | Thin bilayer films of copper metal on titanium were sputter deposited on oxidized silicon wafers and annealed in vacuum and hydrogen ambients. Annealing in vacuum caused the bilayers to fail in tension, while the hydrogen annealed films did not fail. This observation is explained as stress generated due to crystal lattice volume changes and thermal expansion coefficients. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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