Band structure and charge control studies ofn‐ andp‐type pseudomorphic modulation‐doped field‐effect transistors
| Autor: | Jasprit Singh, M H Jaffe |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Materials science
Condensed matter physics Doping General Physics and Astronomy chemistry.chemical_element Schrödinger equation Condensed Matter::Materials Science symbols.namesake chemistry Charge control symbols Charge carrier Field-effect transistor Poisson's equation Electronic band structure Indium |
| Zdroj: | Journal of Applied Physics. 65:329-338 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.342545 |
| Popis: | We present results of a numerical formalism developed to address the band structure and the charge control problem in pseudomorphic n‐ and p‐type modulation‐doped field‐effect transistors (MODFETs), which are created by adding excess indium in the active channel region. For n‐type structures, the tight‐bonding formalism is used to study the effect of strain on the crystal electronic properties. A finite‐difference technique to solve the Schrodinger equation simultaneously with the Poisson equation is used to model the MODFET. The enhanced performance in n‐type pseudomorphic devices has been shown to be primarily due to better charge confinement. Results are also presented as a function of channel strain. For p‐type structures, the Kohn–Luttinger formulation is used together with deformation potential theory to describe the hole states. Significant reductions in the mass of the hole gas due to biaxial compressive strain are demonstrated, suggesting dramatic potential improvement in the operation characteri... |
| Databáze: | OpenAIRE |
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