Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield
| Autor: | Vasiliy O. Pelenovich, Dejun Fu, Alexander Tolstogouzov, A. E. Ieshkin, S. F. Belykh, N. G. Korobeishchikov, P. Mazarov |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon Projectile Nuclear Theory Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Ion Bismuth Specific kinetic energy chemistry Sputtering Yield (chemistry) 0103 physical sciences Specific energy Nuclear Experiment 0210 nano-technology Instrumentation |
| Zdroj: | Vacuum. 188:110188 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2021.110188 |
| Popis: | An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones. |
| Databáze: | OpenAIRE |
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