Investigating Undoped HfO2 as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

Autor:	Pravin N. Kondekar, Bhaskar Awadhiya, Ashvinee Deo Meshram
Rok vydání:	2019
Předmět:	Range (particle radiation) Materials science Dopant business.industry Doping Oxide Heterojunction Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business Deposition process Voltage
Zdroj:	Transactions on Electrical and Electronic Materials. 20:467-472
ISSN:	2092-7592 1229-7607
DOI:	10.1007/s42341-019-00137-3
Popis:	In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO2 and Zr doped HfO2 as a ferroelectric material. Use of undoped HfO2 in place of Zr doped HfO2 as a ferroelectric material will ease the deposition process and simplify the processing steps, as ferroelectricity in undoped HfO2 can be obtained without introduction of dopant elements. This replacement of ferroelectric oxide enhances the performance of heterostructure in terms of absolute voltage amplification ( $$V_{D} > V_{S}$$ ). Undoped HfO2 provides higher magnitude voltage amplification as compared to Zr doped HfO2 although the range to voltage amplification is reduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b65338ce45e086e6d11eb583023da4a3 https://doi.org/10.1007/s42341-019-00137-3 Zobrazit plný text záznamu Full text from SpringerLink