| Autor: |
S. Hayashida, Toshimasa Matsuoka, T. Nakano, J. Takagi, S. Morishita, M. Yamanaka, Y. Sato, S. Kakimoto, Hiroshi Kotaki, Keiichiro Uda, K. Sugimoto, T. Ogura, Kouichirou Adachi |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.1995.499350 |
| Popis: |
Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T/sub ox/=2.8 nm and L=0.5 /spl mu/m even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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