Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
| Autor: | Elmer Estacio, Karim Omambac, Armando Somintac, J. G. Porquez, Arnel Salvador, Karl Cedric Gonzales, John Daniel Vasquez, Mae Agatha Tumanguil, Elizabeth Ann Prieto, Alexander De Los Reyes, Kohji Yamamoto, Masahiko Tani, Joselito Muldera, Lorenzo Lopez |
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| Rok vydání: | 2017 |
| Předmět: |
Gallium manganese arsenide
Materials science Condensed matter physics Terahertz radiation General Physics and Astronomy 02 engineering and technology Substrate (electronics) Magnetic semiconductor 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field chemistry.chemical_compound Crystallinity chemistry 0103 physical sciences General Materials Science 010306 general physics 0210 nano-technology Absorption (electromagnetic radiation) Molecular beam epitaxy |
| Zdroj: | Current Applied Physics. 17:522-526 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2017.01.021 |
| Popis: | We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the B u p and B d o w n -related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs. |
| Databáze: | OpenAIRE |
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