CMOS prototype image sensor with edge enhancement to compensate for blurring

Autor: Luis A. Villa-Vargas, Jair Garcia-Lamont, Miguel Angel Aleman-Arce
Rok vydání: 2012
Předmět:
Zdroj: International Journal of Electronics. 99:503-518
ISSN: 1362-3060
0020-7217
DOI: 10.1080/00207217.2011.629217
Popis: In this article, the design and realisation of an analogue complementary metal oxide semiconductor (CMOS) prototype image sensor with edge enhancement to compensate for blurring is presented. The chip is designed with voltage and current modes, and the main parts are one 16 × 16 pixel array, one pair of absolute value circuits and three trans-impedance amplifiers. The technology process is TSMC 0.35 µm. The edge processing is performed in parallel on pixel level. The performance of the sensor comprises a processing time of 450 ns; an optical dynamic range of 53 dB; a power consumption, at 30 frames/s, of 1.5 mW; and a peak signal-to-noise ratio of 44 dB.
Databáze: OpenAIRE