Defect study of GaN based LED structure by electron beam induced current
| Autor: | Skirmantas Lapinskas, Chun-Han Lin, R. Tomašiūnas, Arūnas Kadys, I. Reklaitis, T. Grinys, Edgaras Jelmakas, Tadas Malinauskas, Chih-Chung Yang |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Scanning electron microscope Electron beam-induced current Condensed Matter Physics Evaporation (deposition) law.invention law Optoelectronics Dry etching Metalorganic vapour phase epitaxy Electron beam-induced deposition business Beam (structure) Light-emitting diode |
| Zdroj: | physica status solidi c. 11:734-737 |
| ISSN: | 1610-1642 1862-6351 |
| Popis: | Blue GaN based light emitting diode structure was deposited by metal organic chemical vapour deposition technique. The conventional photolithography technique followed by dry etching and contact evaporation was used to fabricate the mesas of the optoelectronic device. The produced structures were characterized by photoluminescence, electroluminescence, X-ray diffraction, scanning electron and atomic force microcopy. Electron beam induced current was used to study defects produced during the growth process. The electron beam induced current measurements showed that defect structures formed at different growth stages can be examined by changing incident electron beam energy and thus beam penetration depth. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text