Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system

Autor:	L. Cong, John D. Albrecht, P. Paul Ruden, D. Cohen, M. I. Nathan
Rok vydání:	1996
Předmět:	Materials science business.industry Heterojunction Surfaces and Interfaces Substrate (electronics) Semiconductor device Condensed Matter Physics Piezoelectricity Surfaces Coatings and Films Crystal Stress (mechanics) Optoelectronics business Quantum tunnelling Molecular beam epitaxy
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:924-927
ISSN:	1520-8559 0734-2101
Popis:	We demonstrate that high quality (111)B oriented heterostructures can be grown in a gas source molecular beam epitaxy system if unity III/V flux ratio, proper substrate temperature, and misoriented substrates are used. We also show piezoelectric modifications of current–voltage characteristics of double barrier resonant tunneling devices by applying uniaxial stresses along certain crystal directions. We found that, under uniaxial, compressive stress parallel to the (110) crystal direction for (001) oriented devices and stress parallel to the (111) direction for (111)B oriented devices, the resonant current peak voltages shift to higher values, and under stress parallel to the (110) direction for (001) oriented devices, the peak voltages shift to lower values. We attribute the asymmetric peak shifts to piezoelectric effects induced by uniaxial stress. Our experimental results are in agreement with calculations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b6295fbf8c27c2406cfe8850ef6f3a75 https://doi.org/10.1116/1.580416 Zobrazit plný text záznamu