| Autor: |
Jiyoon Chang, Minsung Kim, Lee Sang-Hwa, Chang-Soo Kim, Minsu Oh, Jun Ye, Sooryong Lee, Sangwoo Park, Robert Boone, Seungjong Lee, Stanislas Baron, Jungmin Kim, Youngmi Kim, Na-Rae Bang, Pengcheng Li, No-Young Chung, Xinxin Zhou, Rachit Gupta |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Extreme Ultraviolet (EUV) Lithography XI. |
| Popis: |
With conventional methods, improvements in optical proximity correction (OPC) runtime and accuracy can be challenging. Often improvements in accuracy have limited impact or require longer runtimes. Conversely, improvements in runtime often come at a sacrifice to overall correction quality. OPC industries have been developing and applying machine-learning (ML) methods to address both issues together, such as the Newron® machine learning family of products, which provides for both faster ML-based correction and more accurate resist models. Benchmark testing shows that ML-based correction prediction can yield runtime improvements of 30% or more without sacrificing pattern fidelity. It also shows that a ML resist model can deliver simulation accuracy 15% better than a conventional lithography model. This paper discusses the conversion flow from baseline OPC recipe to ML-accelerated recipe and presents results of a study that applies this technique to a sub-5 nm EUV test case, as well as results of a study that leverages a ML resist model to improve OPC accuracy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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