| Autor: |
Vladimir A. Gritsenko, Andrey Gismatulin, Oleg M. Orlov |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. |
| DOI: |
10.29003/m1651.silicon-2020/364-368 |
| Popis: |
The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect and charge transport in memristores based on silicon nitride. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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