Dual-acceptor doped p -ZnO:(As,Sb)/n -GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector
| Autor: | E. Przeździecka, Krzysztof Kopalko, Adrian Kozanecki, Rafal Jakiela, M. Stachowicz, Paweł Dłużewski, K. Gościński, A. Wierzbicka, M.A. Pietrzyk |
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| Rok vydání: | 2014 |
| Předmět: |
Photocurrent
Materials science business.industry Doping Photodetector Heterojunction Surfaces and Interfaces Condensed Matter Physics medicine.disease_cause Acceptor Surfaces Coatings and Films Electronic Optical and Magnetic Materials Materials Chemistry medicine Optoelectronics Electrical and Electronic Engineering business Selectivity Ultraviolet Diode |
| Zdroj: | physica status solidi (a). 211:2072-2077 |
| ISSN: | 1862-6300 |
| Popis: | High quality heterojunctions based on dual acceptor doped ZnO:(As,Sb) films grown on n-type GaN templates were used for UV detector application. Photodetectors made on the obtained diodes appeared to have a high selectivity in the UV spectral range. Photocurrent measurements revealed a very narrow response window of ∼12 nm only. The difference between the dark and bright current was large and the ratio of these currents was about 103. The response time of the detectors is shorter than 1 ms. |
| Databáze: | OpenAIRE |
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