Polarized electronic Raman scattering in high-Tc superconductors
Autor: | Zhenyu Li, D. Pelloquin, R. J. Hemley, V. V. Struzhkin, A. Daignere, Alexander F. Goncharov, Ho-kwang Mao, Patrick Fournier, Richard L. Greene, Chris Kendziora |
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Rok vydání: | 2000 |
Předmět: |
Superconductivity
Materials science Condensed matter physics Doping Isotropy Energy Engineering and Power Technology chemistry.chemical_element Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials symbols.namesake Hysteresis chemistry Condensed Matter::Superconductivity symbols Condensed Matter::Strongly Correlated Electrons Cuprate Electrical and Electronic Engineering Anisotropy Raman scattering |
Zdroj: | Physica C: Superconductivity. :2189-2192 |
ISSN: | 0921-4534 |
DOI: | 10.1016/s0921-4534(00)00967-9 |
Popis: | We study the polarized Electronic Raman Scattering (ERS) of several classes of high-T c cuprates as functions of temperature, doping, and pressure with an emphasis on the effect of superconductivity. The doping dependence of the single-layer HgBa 2 CuO 4+ δ (Hg1201) confirms our earlier observations from two-layer Bi 2 Sr 2 CaCu 2 O 8+ δ (Bi2212) that the superconducting energy gap is highly anisotropic at optimal doping, but that 2Δ peaks associated with superconductivity are not present in underdoped crystals. Low temperature ERS measurements of the n-type (T′) Pr 1.85 Ce 0.15 CuO 4 at optimal doping (T c = 20K) show negligible gap anisotropy, consistent with other spectroscopic results which suggested an isotropic s -wave order parameter. Normal state Raman scattering measurements of underdoped Bi2212 at pressures up to 7.6 GPa reveal anomalies in the lattice dynamics which offer insight into local oxygen ordering and may influence the observed large hysteresis in T c (P). |
Databáze: | OpenAIRE |
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