Hysteresis-free behavior of MoS2 negative capacitance transistor by using low-temperature grown HfO2 as encapsulation layer

Autor: Xinge Tao, Lu Liu, Jingping Xu
Rok vydání: 2022
Zdroj: TENCON 2022 - 2022 IEEE Region 10 Conference (TENCON).
DOI: 10.1109/tencon55691.2022.9977537
Databáze: OpenAIRE