GaN MSM UV photodetectors

Autor: Bogdan Paszkiewicz, B. Boratyński, Miroslaw Szreter
Rok vydání: 2003
Předmět:
Zdroj: 14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562).
DOI: 10.1109/mikon.2002.1017947
Popis: GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.
Databáze: OpenAIRE