Autor: |
Bogdan Paszkiewicz, B. Boratyński, Miroslaw Szreter |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562). |
DOI: |
10.1109/mikon.2002.1017947 |
Popis: |
GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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