Electronic band structure and Shubnikov–de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice
| Autor: | Hassan Chaib, Abdellatif Elanique, Abdelhakim Nafidi, Es-Said El-Frikhe, Driss Barkissy, Abderrazak Boutramine, H. Charifi |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Magnetoresistance Condensed matter physics Band gap Superlattice Fermi level 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Cutoff frequency Spectral line Shubnikov–de Haas effect symbols.namesake 0103 physical sciences symbols General Materials Science 010306 general physics 0210 nano-technology Electronic band structure |
| Zdroj: | Applied Physics A. 122 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-015-9561-x |
| Popis: | We have investigated the band structure E(d = d 1 + d 2), E(k z) and E(k p), respectively, as a function of the SL period, d, in the growth direction and in plan of InAs(d 1 = 160 A)/GaSb(d 2 = 105 A) type II superlattice, performed in the envelope function formalism with the valence band offset, Λ, of 510 meV at 4.2 K. For the ratio d 1/d 2 = 1.52, d and Λ dependence of the SL energy band gap show that the semiconductor-to-semimetal transition takes place at d c = 173 A and Λ c = 463 meV. Therefore, this sample is semimetallic. The position of the Fermi level, E F = 500.2 meV, indicates n type conductivity. The spectra of energy, E(k z, k p), show a negative band gap of −48.3 meV. The cutoff wavelength |λ c| = 25.7 µm indicates that this sample can be used as a far-infrared detector. Further, we have interpreted the minima of the magnetoresistance oscillations, Shubnikov–de Haas effect, observed by D. M. Symons et al. |
| Databáze: | OpenAIRE |
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