Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

Autor:	Yang Zhi-Jian, Qin Zhi-Xin, YU Tong-Jun, Zhang Guo-Yi, MU Sen, Huang Liu-Bing, Chen Zhi-Zhong, Pan Yao-Bo, Jia Chuan-Yu
Rok vydání:	2007
Předmět:	Materials science Equivalent series resistance business.industry Multiple quantum General Physics and Astronomy medicine.disease_cause law.invention Barrier layer Crystal Wavelength law medicine Optoelectronics business Ultraviolet Light-emitting diode Diode
Zdroj:	Chinese Physics Letters. 24:3245-3248
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/24/11/061
Popis:	Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b5ea08d4f1ad00e87d7abb900415e1fe https://doi.org/10.1088/0256-307x/24/11/061 Zobrazit plný text záznamu