Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area

Autor:	Ashok K. Sood, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Russell D. Dupuis, Sachidananda Babu, Nibir K. Dhar, Theeradetch Detchprohm, Jay Lewis, P. Parminder Ghuman, Hoon Jeong, Mi-Hee Ji
Rok vydání:	2019
Předmět:	Materials science business.industry Chemical vapor deposition medicine.disease_cause Epitaxy Avalanche photodiode medicine Optoelectronics Metalorganic vapour phase epitaxy Absorption (electromagnetic radiation) business Ultraviolet Voltage Dark current
Zdroj:	Gallium Nitride Materials and Devices XIV.
Popis:	Front-illuminated GaN p-i-p-i-n separate-absorption and multiplication avalanche photodiode (SAM-APD) epitaxial structures were grown by metalorganic chemical vapor deposition (MOCVD) on n-type bulk GaN substrates and fabricated into 4×4 arrays with a large detection area of 100×100 μm2. The SAM-APD array showed a uniform distribution of dark current density of JDark
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b5e9c0bd246b81b71e4e71903522fec6 https://doi.org/10.1117/12.2507880 Zobrazit plný text záznamu