Fabrication and characteristics of Ag/Pb(Zr0.53Ti0.47)O3/ultrathin-SiO2/Si and Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7.δsystems
| Autor: | Bo Xu, Bai-ru Zhao, Weizhi Gong, Chun Cai, Zhao Hao, Yuan Lin, B. T. Liu |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Superconductivity
Barium oxide Materials science Silicon business.industry chemistry.chemical_element Field effect Dielectric Coercivity Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Field-effect transistor business |
| Zdroj: | Ferroelectrics. 252:329-336 |
| ISSN: | 1563-5112 0015-0193 |
| Popis: | The Ag/Pb(Zr0.53Ti0.47)O3 (PZT) /YBa2Cu3O7.δ (YBCO) with small gate area and Ag/PZT/ultrathin-SiO2/Si heterostructrual devices have been prepared. The polarization and field effect characteristics have been studied. Highly (100) oriented PZT was successfully integrated onto Si using ultrathin-SiO2 buffer layer. Obvious field effect occurred at a low gate bias of 0.5 V. In Ag/PZT/YBCO three terminal device with the small gate area of 6×10−6 cm2, very large saturation and remnant polarization and small coercive field are obtained. The maximum modulation of YBCO channel resistance ΔRDS/RDS is 3% under the gate voltage of±9 V at 64 K, at which the superconducting and normal state transition is driven by channel current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|