Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes
| Autor: | Kuniyoshi Okamoto, Masashi Kubota, Satoshi Nakagawa, Hiroki Tsujimura, Hiroaki Ohta |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Valence (chemistry) Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Electroluminescence Polarization (waves) Light scattering law.invention law Electric field Physics::Space Physics Optoelectronics Atomic physics business Light-emitting diode Diode |
| Zdroj: | Applied Physics Letters. 91:171110 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2800817 |
| Popis: | An accurate method of estimating polarized light emission was presented for nonpolar m-plane InGaN-based blue light emitting diodes, where the unpolarized component caused by unintentional light scattering was eliminated as noise. The polarization ratios of electroluminescence (EL) at 300 and 100K were 0.85 and 0.98, respectively. The energy difference between the highest and the second highest valence bands was estimated to be 129meV from the temperature dependence of the spectrally integrated EL intensities under the assumption of Fermi statistics. This value agreed with the one (=118meV) obtained directly from the difference of the EL peak energies between two polarized components, the electric fields perpendicular and parallel to the c axis. |
| Databáze: | OpenAIRE |
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