Measurement of the linewidth enhancement factor of injection lasers with a strained active layer
| Autor: | Aleksandr S Logginov, O V Danilina |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Strain (chemistry) Condensed Matter::Other business.industry Physics::Optics Statistical and Nonlinear Physics equipment and supplies Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer law.invention Condensed Matter::Materials Science Laser linewidth Optics Semiconductor Quantum dot laser law Optoelectronics Physics::Atomic Physics Electrical and Electronic Engineering business Quantum well Tunable laser |
| Zdroj: | Quantum Electronics. 25:1043-1044 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe1995v025n11abeh000529 |
| Popis: | A method for determination of the linewidth enhancement factor α of semiconductor injection lasers is proposed. Experimental values of α, obtained at carrier densities corresponding to pump currents near the threshold value, are reported for InGaAs/GaAs lasers with a strained active layer and for unstrained quantum-well GaAs/GaAlAs lasers. It is shown that in the presence of strain the factor α is 1.9 times less than for conventional quantum-well lasers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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