Effect of group II impurity and group III native defect on disordering Cu–Pt type ordered structures in In0.5(AlxGa1−x)0.5P layers

Autor:	P. N. Grillot, K. C. Hsieh, G. E. Höfler, J.-W. Huang, R. D. Pai, K. L. Chang
Rok vydání:	2002
Předmět:	Self-diffusion Crystallography chemistry Transmission electron microscopy Impurity Magnesium Diffusion Doping Inorganic chemistry General Physics and Astronomy chemistry.chemical_element Tellurium Acceptor
Zdroj:	Journal of Applied Physics. 92:6582-6589
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1518760
Popis:	Cu–Pt ordering is studied with cross-sectional transmission electron microscopy in p-type, n-type, and nominally undoped InAlP and In(AlGa)P layers. These different doping conditions allow us to investigate the effect of acceptor doping with magnesium and donor doping with tellurium on removing Cu–Pt ordering in In(AlGa)P. Even more significant, however, is the ability to investigate the effect of native group III self-diffusion in p-type, n-type, and nominally undoped InAlP and In(AlGa)P layers. Our data indicate that the rapidly diffusing Mg acceptor species is less effective on removing Cu–Pt ordering than the relatively slow diffusing Te donor species. Also, our results indicate that the native group III defects and group III self-diffusion play a more important role in removing Cu–Pt ordering than either group II acceptor diffusion or group VI donor diffusion.
Databáze:	OpenAIRE
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