The effect of fast neutrons on the conductance of single-crystal silicon
| Autor: | V. A. Varlachev, E. S. Solodovnikov |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
inorganic chemicals
Materials science integumentary system Silicon Physics::Instrumentation and Detectors Astrophysics::High Energy Astrophysical Phenomena technology industry and agriculture General Physics and Astronomy Conductance chemistry.chemical_element Fluence Neutron temperature chemistry Neutron flux biological sciences lipids (amino acids peptides and proteins) Neutron Irradiation Atomic physics Single crystal |
| Zdroj: | Russian Physics Journal. 52:584-589 |
| ISSN: | 1573-9228 1064-8887 |
| DOI: | 10.1007/s11182-009-9269-5 |
| Popis: | The dependence of variation of the specific conductance of single-crystal silicon on the fast neutron fluence is calculated. The results of calculations are compared with the experimental data obtained in two channels of an IRT-T reactor with different neutron spectra. These experimental data are also discussed. The fast neutron fluence was controlled using threshold sulfur activation detectors. The specific electrical resistance was measured by a 4-probe method. The calculation data are in good agreement with experiment and show that the variation of the specific conductance due to exposure to fast neutrons is in direct proportion to the fluence of these neutrons. The proportionality coefficient depends on the neutron spectrum, but is independent of the initial specific conductance. In so doing, it makes no difference, whether silicon was previously irradiated or not. |
| Databáze: | OpenAIRE |
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