Autor:	L. Dormer, D.S. James
Rok vydání:	2005
Předmět:	Materials science business.industry Transmitter Optoelectronics MESFET business Power (physics) Low noise Term (time)
Zdroj:	MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1981.1129890
Popis:	Low-noise GaAs MESFET'S have been investigated for catastrophic burn-out ratings when exposed to representative pulses from an X-band transmitter/T-R cell combination. Also reported are failure analyses, non-catastrophic but recoverable effects and longer term tests.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b5b9595d8e6f8fee1c7eb40e5c4ff612 https://doi.org/10.1109/mwsym.1981.1129890 Zobrazit plný text záznamu