Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material
| Autor: | Stephen Krause, C. O. Jung, Syd R. Wilson |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) technology industry and agriculture chemistry.chemical_element Silicon on insulator Mineralogy Epitaxy Crystallographic defect chemistry.chemical_compound Ion implantation chemistry Silicon carbide Composite material Stacking fault |
| Zdroj: | Applied Physics Letters. 53:63-65 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.100568 |
| Popis: | The structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material was directly studied by high‐resolution transmission electron microscopy. Epitaxially aligned precipitates 5–25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm−3. Precipitate‐matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis. |
| Databáze: | OpenAIRE |
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