Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
| Autor: | Blake Powell, Levi Gant, Sauvik Chowdhury, Kevin Matocha, Kasturirangan Rangaswamy |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 020208 electrical & electronic engineering Volume (computing) 02 engineering and technology Condensed Matter Physics 01 natural sciences Planar Reliability (semiconductor) CMOS Mechanics of Materials 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science Foundry business Short circuit |
| Zdroj: | Materials Science Forum. 924:697-702 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.697 |
| Popis: | This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at room temperature, increasing to 7.5 mΩ.cm2 at 175 °C. Total switching losses were less than 300μJ (VDD = 800V, ID = 20A). The devices showed excellent gate oxide reliability with VTH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (VGS = 25V) and 2500 hours (VGS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed. |
| Databáze: | OpenAIRE |
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