Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
| Autor: | Tanya Nigam, M. Depas, M.M. Heyns |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Dielectric strength business.industry Gate dielectric Oxide Analytical chemistry Time-dependent gate oxide breakdown Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor chemistry Gate oxide law Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | Solid-State Electronics. 41:725-728 |
| ISSN: | 0038-1101 |
| Popis: | The different stages of wear-out of an ultra thin 1.7 nm SiO2 during a time dependent dielectric breakdown test of a poly-Si gate metal-oxide-silicon capacitor structure are discussed. For these ultra thin gate oxides, dielectric breakdown already occurs in the direct tunnelling regime. It is shown that the initial continuous increase of the direct tunnel current during constant voltage stress is followed by a complex fluctuation mode. This is defined as the dielectric breakdown of these ultra thin ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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