A 0.43 V/90 nA/mm Lateral AlGaN/GaN Schottky Barrier Diode With Plasma-Free Groove Anode Technique
| Autor: | Yueguang Lv, Ruohan Li, Shengrui Xu, Yanni Zhang, Xiaoling Duan, Juan Lu, Tao Zhang, Yue Hao, Jincheng Zhang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 42:1747-1750 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3123652 |
| Popis: | In this letter, high-performance AlGaN/GaN Schottky barrier diodes (SBDs) with a great balance between forward and reverse characteristics are demonstrated. Benefiting from a plasma-free, low-damaged wet etching technique of an AlGaN layer at the anode region and low work-function tungsten (W) as the anode, lateral GaN SBDs with a low turn-on voltage ( $\text{V}_{{\mathrm {T}}}$ ) of 0.43 V and a low reverse current ( $\text{I}_{{\mathrm {R}}}$ ) of 90 nA/mm are obtained. Meanwhile, owing to the flattened self-terminated etching surface and the assistance of SiN passivation grown by low-pressure chemical vapor deposition, a high breakdown voltage of 1.83 kV and a power figure-of-merit (FOM) of 1.20 GW/cm 2 are achieved for the fabricated GaN SBD with a spatial distance ( $\text{L}_{{\mathrm {AC}}}$ ) of $15 ~\mu \text{m}$ from cathode to anode. The lateral GaN SBD fabricated with the optimized wet etching technique shows great potential for next-generation power electronics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|