Modeling of electron transmittance and tunneling current through an interfacial oxide-high-k-gate-stack by including transverse-longitudinal kinetic energy coupling and anisotropic masses: Effects of metal work function

Autor:	Muhammad Fauzi Sahdan, Mikrajuddin Abdullah, Fatimah A. Noor, Panji Achmari, Khairurrijal, Ferry Iskandar
Rok vydání:	2012
Předmět:	Materials science Condensed matter physics Scanning tunneling spectroscopy Transmittance Analytical chemistry Work function Dielectric Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Metal gate Quantum tunnelling Computer Science::Information Theory High-κ dielectric
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.4730720
Popis:	Electron transmittance and tunneling current through high-k dielectric gate stacks of metal-oxide-semiconductor (MOS) capacitors have been calculated by including transverse-longitudinal kinetic energy coupling, which is represented by a gate electron phase velocity, and anisotropic masses. Metal gate/HfSiOxN/SiO2/p-Si(100) structures with applying a negative bias voltage to the gate is used to discuss the transmittance and tunneling current. In this work, the effect of the work function to the transmittance and tunneling current are considered. It is shown that the transmittance decreases as the work function increases. It is also found that the tunneling current is influenced by the metal work function.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b58e9f6d80bdd4f3864fa2b8fe0cc4fc https://doi.org/10.1063/1.4730720 Zobrazit plný text záznamu