Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing
| Autor: | Jing Hua Xia, Ling Sang, Yi Ying Zha, Fei Yang, Wen Ting Zhang, Yun Lai An |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Mechanical Engineering PIN diode 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Carbon film Ultra high voltage Mechanics of Materials law 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 1014:137-143 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.1014.137 |
| Popis: | A novel process is developed for minority carrier lifetime enhancement in ultra-high 4H-SiC PiN diodes. It comprises two separate processes. Firstly, the ultra-thick epitaxial grown drift layer (200μm) covered with a protective thin carbon film is subject to a 1500°C high-temperature anneal process in Ar atmosphere for 2 hours. Secondly, a surface passivation process is adopted to reduce the surface recombination rate. μ-PCD tests show that after high-temperature anneal, the thick drift layer shows a minority carrier lifetime increase to about 1.6 μs. PiN diodes based on the novel process are fabricated and their electric characteristics are measured. Results show a low specific on-resistance of 16.3 mΩ·cm2 at 25°C and 14 mΩ·cm2 at 125 °C. Compared with simulation results, it is shown that its effective minority carrier lifetime increase to about 5μs .Our study demonstrates that the developed novel process is effective in minority carrier lifetime enhancement in ultra-voltage 4H-SiC PiN diodes. |
| Databáze: | OpenAIRE |
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