77–110 GHz 65-nm CMOS Power Amplifier Design
| Autor: | Christina F. Jou, Dow-Chih Niu, Kun-Long Wu, Yu-Shao Shiao, Kuan-Ting Lai, Robert Hu |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Terahertz Science and Technology. 4:391-399 |
| ISSN: | 2156-3446 2156-342X |
| DOI: | 10.1109/tthz.2014.2315451 |
| Popis: | This paper details the development of our millimeter- wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77- 110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below -10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band. |
| Databáze: | OpenAIRE |
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