| Autor: |
Masahiro Asada, Safumi Suzuki, Atsushi Teranishi, Hiroki Sugiyama, M. Shiraishi, Haruki Yokoyama |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves. |
| DOI: |
10.1109/icimw.2009.5324766 |
| Popis: |
A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (≈0.63μm2) and a low available current density (≈3mA/μm2) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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