| Autor: |
Yuichi Oshima, Kazutoshi Watanabe, Tomoyoshi Mishima, Masatomo Shibata, Takehiro Yoshida, Takeshi Eri |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Technology of Gallium Nitride Crystal Growth ISBN: 9783642048289 |
| DOI: |
10.1007/978-3-642-04830-2_4 |
| Popis: |
An outline is presented of the fabrication technique of freestanding GaN wafers by hydride vapor phase epitaxy using the void-assisted separation method and the properties of resulting crystals. A thick GaN layer of large area can be separated with excellent reproducibility from a base substrate by the application of thermal stress. This process is assisted by numerous voids formed near the interface between the thick GaN layer and the base substrate. By using this method, high-quality GaN wafers of large area with diameters of over 3 in. have been prepared. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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